Porosity-induced modification of the phonon spectrum of n-GaAs

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 491-493

  Tiginyanu, I M ^a,c   Irmer, G ^b   Monecke, J ^b   Vogt, A ^a   Hartnagel, H L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b TU BERGAKADEMIE FREIBERG   (Germany)

^c INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; ETCHING; NANOSTRUCTURED MATERIALS; PHONONS; POROSITY; POROUS MATERIALS; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SULFURIC ACID;

ANODIC ETCHING; PLASMON MODES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031118009     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/001     Document Type: Article

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