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Volumn , Issue , 2003, Pages 536-544

Reliability issues and advanced failure analysis deprocessing techniques for copper/low-k technology

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COPPER; CROSSTALK; ELECTROMIGRATION; FAILURE ANALYSIS; LOW TEMPERATURE EFFECTS; REACTIVE ION ETCHING; RELIABILITY;

EID: 0038309881     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (10)

References (23)
  • 1
    • 0034821078 scopus 로고    scopus 로고
    • Characterization of Cu extrasion failure mode in dual-damascene Cu/low-k interconnects under electromigration reliability test
    • th IPFA 2001
    • (2001) th IPFA 2001 , pp. 174-177
    • Kim, J.-W.1    Song, W.-S.2
  • 3
    • 0033285234 scopus 로고    scopus 로고
    • Impact of new materials, changes in physics and continued ULSI scaling on failure mechanisms and analysis
    • th IPFA 1999
    • (1999) th IPFA 1999 , pp. 1-8
    • Nishi, Y.1    McPherson, J.W.2
  • 4
    • 0034832578 scopus 로고    scopus 로고
    • Failure analysis challenges
    • Lawrence C. Wagner, "Failure analysis challenges", pp. 36-41, 2001 IPFA
    • (2001) 2001 IPFA , pp. 36-41
    • Wagner, L.C.1
  • 5
    • 0033743064 scopus 로고    scopus 로고
    • Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process
    • R. Tsu, J.W. McPherson and W.R. McKee, " Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process", pp. 348-353, IRPS 2000
    • IRPS 2000 , pp. 348-353
    • Tsu, R.1    McPherson, J.W.2    McKee, W.R.3
  • 6
    • 0032645995 scopus 로고    scopus 로고
    • Leakage current degradation and carrier conduction mechanisms for Cu/BCB damascene process under bias-temperature stress
    • S. Kim, T. Cho and P. Ho, "Leakage Current Degradation and Carrier Conduction Mechanisms for Cu/BCB Damascene Process Under Bias-Temperature Stress", pp. 277-282, IRPS 1999
    • (1999) IRPS 1999 , pp. 277-282
    • Kim, S.1    Cho, T.2    Ho, P.3
  • 8
    • 0034995065 scopus 로고    scopus 로고
    • Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects
    • Junji Noguchi, et al." "Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects", pp. 355-359, 2001 IRPS
    • (2001) 2001 IRPS , pp. 355-359
    • Noguchi, J.1
  • 9
    • 0036088682 scopus 로고    scopus 로고
    • Pseudo-breakdown events induced by bias-thermal-stressing of intra-level Cu interconnects reliability & performance impact
    • Won S. Song, Tae J. Kim, et al., "Pseudo-breakdown events induced by bias-thermal-stressing of intra-level Cu interconnects reliability & performance impact", pp. 305-310, IRPS 2002
    • (2002) IRPS 2002 , pp. 305-310
    • Song, W.S.1    Kim, T.J.2
  • 10
    • 0035717950 scopus 로고    scopus 로고
    • Physical analysis of reliability degradation in sub-micro devices
    • M.K. Radhakrishnan, K.L. Pey, C.H. Tung, et al., "Physical analysis of reliability degradation in sub-micro devices" pp. 857 - 860, 2001 IEDM
    • (2001) 2001 IEDM , pp. 857-860
    • Radhakrishnan, M.K.1    Pey, K.L.2    Tung, C.H.3
  • 11
    • 0035163444 scopus 로고    scopus 로고
    • Nanoscale fault isolation technique by conducting atomic force microscopy
    • Hitoshi Maeda, Yukari Imai, Tohru Koyama, et al., "Nanoscale fault isolation technique by conducting atomic force microscopy", pp. 251-254, 2001 IEEE
    • (2001) 2001 IEEE , pp. 251-254
    • Maeda, H.1    Imai, Y.2    Koyama, T.3
  • 12
    • 0036081971 scopus 로고    scopus 로고
    • Stress-induced voiding under vias connected to wide Cu metal leads
    • E.T. Ogawa, J.W. McPherson and et al., "Stress-induced voiding under vias connected to wide Cu metal leads", pp. 312-321, 2002 IRPS
    • (2002) 2002 IRPS , pp. 312-321
    • Ogawa, E.T.1    McPherson, J.W.2
  • 13
    • 0032266438 scopus 로고    scopus 로고
    • Structure dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure
    • E. Wu, E. Nowak, J. Aitken, et al., "Structure dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure", pp. 187 - 190, 1998 IEDM
    • (1998) 1998 IEDM , pp. 187-190
    • Wu, E.1    Nowak, E.2    Aitken, J.3
  • 14
    • 0034994978 scopus 로고    scopus 로고
    • Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
    • Robin Degraeve, Ben Kaczer, et al., "Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications", pp. 360 - 366, 2001 IRPS
    • (2001) 2001 IRPS , pp. 360-366
    • Degraeve, R.1    Kaczer, B.2
  • 16
    • 0032661176 scopus 로고    scopus 로고
    • Influence of soft-breakdown on NMOSFET device characteristics
    • T. Pompl, H. Wurzer and et al., "Influence of soft-breakdown on NMOSFET device characteristics", pp. 82-87, 1999 IRPS
    • (1999) 1999 IRPS , pp. 82-87
    • Pompl, T.1    Wurzer, H.2
  • 20
    • 0035013821 scopus 로고    scopus 로고
    • 2 mask etching selectivity in the new D-RIE process
    • 2 Mask Etching Selectivity in the New D-RIE Process", 2001 IEEE
    • (2001) 2001 IEEE
    • Ohara, J.1
  • 22
    • 0000356191 scopus 로고
    • Silicon roughness induced by plasma etching
    • 1 June
    • Richard Petri, Pascal Brault and et al., "Silicon roughness induced by plasma etching", J. Appl. Phys. 75 (11), pp. 7498-7506,1 June 1994
    • (1994) J. Appl. Phys. , vol.75 , Issue.11 , pp. 7498-7506
    • Petri, R.1    Brault, P.2
  • 23
    • 0038443722 scopus 로고    scopus 로고
    • Characterization of reactive ion etching of silicon substrate for backside failure mode analysis
    • Huixian Wu, James Cargo, "Characterization of reactive ion etching of silicon substrate for backside failure mode analysis", pp. 675-682, ISTFA 2002
    • (2002) ISTFA 2002 , pp. 675-682
    • Wu, H.1    Cargo, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.