Impact of low-K dielectrics and barrier metals on TDDB lifetime of Cu interconnects

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 355-359

  Noguchi, J ^a   Saito, T ^a   Ohashi, N ^a   Ashihara, H ^a   Maruyama, H ^a   Kubo, M ^a   Yamaguchi, H ^a   Ryuzaki, D ^a   Takeda, K ^a   Hinode, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC FILMS; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; LEAKAGE CURRENTS; LSI CIRCUITS; SPUTTER DEPOSITION; THERMAL STRESS;

COPPER INTERCONNECTS; ELECTRICAL STRESS; LONG-THROW SPUTTERING; LOW-K DIELECTRICS; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

COPPER;

EID: 0034995065     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. Full copper wiring in a sub-0.25μm CMOS ULSI technology
2. A high performance 0.13mm copper BEOL technology with low-K dielectric
3. Diffusion of copper through dielectric films under bias temperature stress
4. TDDB improvement in Cu metallization under bias stress
5. Simple, reliable Cu/low-k interconnect integration using mechanically-strong low-k dielectric material: Silicon-oxycarbide
6. Impact of low pressure long throw sputtering method on submicron copper metallization
7. Via yield improvement due to optimization of PVD seed/barrier deposition process
8. Improvement of thermal stability of via resistance in dual damascene copper interconnection
9. Complete-abrasive-free process for copper damascene interconnection
10. A 7 level metallization with Cu damascene process using newly developed abrasive free polishing
11. Enhanced dielectric breakdown lifetime of the copper/silicon nitride/silicon dioxide structure
12. x layers for copper metallization