Pseudo-breakdown events induced by biased-thermal-stressing of intra-level Cu interconnects - Reliability & performance impact

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 305-311

  Song, Won S ^a   Kim, Tae J ^a   Lee, Dong H ^a   Kim, Tae K ^a   Lee, Chang S ^a   Kim, Jeong W ^a   Kim, Sam Y ^a   Jeong, Dong K ^a   Park, Ki C ^a   Wee, Young J ^a   Suh, Bong S ^a   Choi, Seung M ^a   Kang, Ho K ^a   Suh, Kwang P ^a   Kim, Sang U ^a  

^a Semiconductor R and D Center   (South Korea)

Author keywords

Breakdown; BTS; Cu; Leakage; PBD; Reliability

Indexed keywords

COMPUTER SIMULATION; COPPER; ELECTRIC FIELD EFFECTS; FAILURE ANALYSIS; INTERFACES (MATERIALS); STRESS ANALYSIS; THERMAL STRESS;

PSEUDO-BREAKDOWN (PBD) PHENOMENON;

ELECTRIC BREAKDOWN;

EID: 0036088682     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Leakage current degradation and carrier conduction mechanisms for Cu/BCB damascene process under bias-temperature stress
2. Re-defining reliability assessment per new intra-via Cu leakage degradation
3. Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
4. Interconnect scaling - The real limiter to high performance ULSI
5. Acceleration factors for thin oxide breakdown
6. Stress-induced void formation in metal lines
7. Leakage and breakdown reliability issues associated with Low-K dielectrics in a dual-damascene Cu process
8. Conduction processes in Cu/Low-K interconnection