A study of bimodal distributions of time-to-failure of copper via electromigration

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2001, Pages 271-274

  Lai, J B ^a   Yang, J L ^a   Wang, Y P ^a   Chang, S H ^a   Hwang, R L ^a   Huang, Y S ^a   Hou, C S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLOGRAPHY; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTROMIGRATION; FAILURE ANALYSIS; GRAIN BOUNDARIES; INTEGRATED CIRCUITS; PHYSICAL VAPOR DEPOSITION; STRESS ANALYSIS; SURFACE CHEMISTRY; TEXTURES;

BIMODAL DISTRIBUTIONS;

COPPER;

EID: 0034848790     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)