Nanoscale fault isolation technique by conducting atomic force microscopy

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2001, Pages 251-254

  Maeda, H ^a   Imai, Y ^a   Koyama, T ^a   Mazumder, M K ^a   Fukumoto, K ^a   Mashiko, Y ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS;

GATE OXIDE LEAKAGE; NANOSCALE FAULT ISOLATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035163444     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)