Leakage current degradation and carrier conduction mechanisms for Cu/BCB damascene process under bias-temperature stress

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 277-282

  Kim, Sang U ^a   Cho, Taiheui ^a   Ho, Paul S ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DEFECTS; DEGRADATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OLEFINS; TANTALUM; THERMAL STRESS;

BENZOCYCLOBUTENE; BIAS TEMPERATURE STRESS; CARRIER CONDUCTION MECHANISMS; DAMASCENE PROCESS; SERPENTINE LINE; TANTALUM BARRIER; TEST STRUCTURE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032645995     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)