Physical analysis of reliability degradation in sub-micron devices

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 857-860

  Radhakrishnan, M K ^a   Pey, K L ^b   Tung, C H ^a   Lin, W H ^b   Ong, S H ^c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c National Semiconductor   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; FAILURE ANALYSIS; GATES (TRANSISTOR); RELIABILITY; SHRINKAGE; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOMETER SCALE; PHYSICAL ANALYSIS; SUBMICRON DEVICES; THIN GATE OXIDES;

MOS DEVICES;

EID: 0035717950     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979648     Document Type: Article

References (17)