Characterization of Cu extrusion failure mode in dual-damascene Cu/low-k interconnects under electromigration reliability test

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2001, Pages 174-177

  Kim, J W ^a   Song, W S ^a   Kim, S Y ^a   Kim, H S ^a   Jeon, H G ^a   Lim, C B ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTROMIGRATION; FAILURE ANALYSIS; INTERCONNECTION NETWORKS; METAL EXTRUSION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS;

DUAL DAMASCENE; ELECTROMIGRATION RELIABILITY TEST; EXTRUSION FAILURE MODE; THERMAL MISMATCH;

INTEGRATED CIRCUIT TESTING;

EID: 0034821078     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Stress in copper films for interconnects
2. Electromigration reliability of dual - Damascene Cu/oxide interconnects
3. Electromigration test structure designed to identify via failure modes
4. Simulation stress-induced Al extrusion and void formation caused by high temperature annealing after via-hole opening in Al interconnects with via-holes
5. Via hole-related simultaneous stress-induced extrusion and void formation in Al interconnects
6. Effect of mechanical stress in electromigration failure mode during accelerated electromigration tests
7. Electromigration in thin aluminum films on titanium nitride
8. Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects