Anisotropic trench etching of Si using SF 6 /O 2 mixture

MHS 1997 - Proceedings of 1997 International Symposium on Micromechatronics and Human Science

Volumn , Issue , 1997, Pages 61-66

  Yao, Yahong ^a   Zhao, Yongjun ^b  

^a TSINGHUA UNIVERSITY   (China)

^b Ministry of Electronics Industry   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ETCHING; FLOW OF GASES; MIXTURES; SILICON; SULFUR HEXAFLUORIDE;

CONSTANT DC BIAS; DC BIAS VOLTAGE; ETCH RATES; PROCESS WINDOW; SINGLE CRYSTALLINE SILICON; SYSTEM PRESSURE; TRENCH ETCHING; VERTICAL EDGES;

BIAS VOLTAGE;

EID: 85060977371     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MHS.1997.768858     Document Type: Conference Paper

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