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Volumn 68, Issue 23, 1996, Pages 3248-3250

Growth and properties of scandium epitaxial films on GaN

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0006304010     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116563     Document Type: Article
Times cited : (18)

References (14)
  • 2
    • 21544457117 scopus 로고    scopus 로고
    • Smithells Metals Reference Book, 6th ed., edited by E. A. Brandes (Butterworths, Boston, 1983), p. 190.
    • Smithells Metals Reference Book, 6th ed., edited by E. A. Brandes (Butterworths, Boston, 1983), p. 190.
  • 3
    • 21544467484 scopus 로고    scopus 로고
    • CRC Practical Handbook of Materials Science, edited by J. F. Shackelford, W. Alexander, and J. S. Park (CRC, Boca Raton, FL, 1995), pp. 381-383.
    • CRC Practical Handbook of Materials Science, edited by J. F. Shackelford, W. Alexander, and J. S. Park (CRC, Boca Raton, FL, 1995), pp. 381-383.
  • 4
    • 0026627294 scopus 로고    scopus 로고
    • S. D. Barrett, Surf. Sci. Reports 14, 271 (1992).
    • S. D. Barrett, Surf. Sci. Reports 14, 271 (1992).
  • 6
    • 21544447737 scopus 로고    scopus 로고
    • L. B. Rowland, K. Doverspike, A. Giordana, M. Fatemi, D. K. Gaskill, M. Skowronski, and J. A. Freitas, Jr., in Silicon Carbide and Related Materials, edited by M. G. Spencer, R. P. Devaty, J. A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, IOP Conf. Proc. 137 (Institute of Physics and Physical Society, Bristol, 1994), p. 429.
    • L. B. Rowland, K. Doverspike, A. Giordana, M. Fatemi, D. K. Gaskill, M. Skowronski, and J. A. Freitas, Jr., in Silicon Carbide and Related Materials, edited by M. G. Spencer, R. P. Devaty, J. A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, IOP Conf. Proc. 137 (Institute of Physics and Physical Society, Bristol, 1994), p. 429.
  • 7
    • 21544433711 scopus 로고    scopus 로고
    • W. J. Meng, Properties of Group III Nitrides, edited by J. H. Edgar (INSPEC, London, 1994), p. 22; I. Akasaki and H. Amano, ibid., p. 30.
    • W. J. Meng, Properties of Group III Nitrides, edited by J. H. Edgar (INSPEC, London, 1994), p. 22; I. Akasaki and H. Amano, ibid., p. 30.
  • 8
    • 21544451600 scopus 로고    scopus 로고
    • R. W. G. Wyckoff, Crystal Structures, 2nd ed. (Wiley, New York, 1982), Vol. 1, p. 11.
    • R. W. G. Wyckoff, Crystal Structures, 2nd ed. (Wiley, New York, 1982), Vol. 1, p. 11.
  • 9
    • 21544462492 scopus 로고    scopus 로고
    • O. Kubaschewski and C. B. Alcock, Metallurgical Chemistry, 5th ed. (Pergamon, Oxford, 1979), p. 268.
    • O. Kubaschewski and C. B. Alcock, Metallurgical Chemistry, 5th ed. (Pergamon, Oxford, 1979), p. 268.
  • 13
    • 21544458239 scopus 로고    scopus 로고
    • S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 286.
    • S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 286.
  • 14
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    • S. C. Binari, Electrochem. Soc. Proc. 95-21, 136 (1995).
    • S. C. Binari, Electrochem. Soc. Proc. 95-21, 136 (1995).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.