Melting induced by epitaxial stress

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 5 A, 1998, Pages 2652-2655

  Bottomley, D J ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Epitaxial crystal growth; GaAs; GaSb; Gibbs free energy; InAs; InP; InSb; Melting; Strain; Stress

Indexed keywords

CRYSTALS; MELTING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; STRESSES; THIN FILMS;

GIBBS FREE ENERGY;

EPITAXIAL GROWTH;

EID: 0032066133     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2652     Document Type: Article

References (22)

1. I. T. Ferguson, A. G. Norman, B. A. Joyce, T.-Y. Seong, G. R. Booker, R. H. Thomas, C. C. Philips and R. A. Stradling: Appl. Phys. Lett. 59 (1991) 3324.
2. A. G. Norman, T.-Y. Seong, I. T. Ferguson, G. R. Booker and B. A. Joyce: Semicond. Sci. Technol. 8 (1993) S9.
3. T.-Y. Scong, A. G. Norman, I. T. Ferguson and G. R. Booker: J. Appl. Phys. 73 (1993) 8227.
4. I. T. Ferguson, A. G. Norman, T.-Y. Seong, R. H. Thomas, C. C. Philips, X, M. Zhang, R. A. Stradling, B. A. Joyce and G. R. Booker: Inst. Phys. Conf.Ser. 120 (1992) 395.
5. X. Zhang, D. W. Pashley, J. H. Neave, J. Zhang and B. A. Joyce: J. Cryst. Growth 121 (1992) 381.
6. P. N. Fawcett, B. A. Joyce, X. Zhang and D. W. Pashley: J. Cryst. Growth 116 (1992) 81.
7. D. J. Tweet, H. Matsuhata, P. Fons, H. Oyanagi and H. Kamei: Appl. Phys. Lett. 70 (1997) 3410.
8. D. J. Tweet, H. Matsuhata, R. Shioda, H. Oyanagi and H. Kamei: Jpn. J. Appl. Phys. 35 (1996) 2025.
9. A. Jayaraman, W. Klement, Jr. and G. C. Kennedy: Phys. Rev. 130 (1963) 540.
10. F. Reif: Fundamentals of Statistical and Thermal Physics (McGraw-Hill, New York, 1965).
11. D. J. Bottomley: Jpn. J. Appl. Phys. 36 (1997) L1464.
12. Thermochemical Data of Pure Substances ed. I. Barin (VCH, New York, 1989).
13. Landolt-Börnstein Numerical Data and Functional Relationships in Science and Technology, ed. O. Madelung (Springer-Verlag, Berlin, 1982) Physics of Group IV Elements and III-V Compounds, subvol. a of Vol. 17, Semiconductors.
14. J. Hornstra and W. J. Bartels: J. Cryst. Growth 44 (1978) 513.
15. D. J. Bottomley and P. Fons: J. Cryst. Growth 160 (1996) 406. Ref.11 proves that the free energy used in this paper is wrong.
16. S. C. Yu, I. L. Spain and E. F. Skelton: Solid State Commun 25 (1978) 49. Some of the triple points in ref. 9 have been revised as the result of data given in this paper.
17. K. Onabe: Jpn. J. Appl. Phys. 21 (1982) 797.
18. K. Onabe: Jpn. J. Appl. Phys. 21 (1982) 964.
19. J. D. Verhoeven: Fundamentals of Physical Metallurgy (Wiley, New York, 1975) Chap. 11.
20. C. Delamarre, J. Y. Laval, L. P. Wang, A. Dubon and G. Schiffmacher: J. Cryst. Growth 177 (1997) 6.
21. P. G. de Gennes and J. Prost: The Physics of Liquid Crystals (Oxford University Press, Oxford, 1995) 2nd ed., p. 1.
22. D. J. Bottomley, Appl. Phys. Lett. 72 (1998) 783.