Photoluminescence and X-ray characterization of relaxed Si1-xGex alloys grown on silicon on insulator (SOI) and implanted SOI substrates

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1278-1283

  Chu, Michael A ^a   Tanner, Martin O ^a   Huang, Fengyi ^a   Wang, Kang L ^a   Chu, Gordon G ^a   Goorsky, Mark S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Epitaxy; Moecular beam epitaxy; Thin film growth technique

Indexed keywords

ANNEALING; BORON; BOROSILICATE GLASS; FILM GROWTH; MOLECULAR BEAM EPITAXY; OXYGEN; PHOTOLUMINESCENCE; SILICA; SILICON ALLOYS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

TRIPLE AXIS X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031141920     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00933-5     Document Type: Article

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