Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 535-537

  Kuo, C H ^a   Chang, S J ^a   Su, Y K ^a   Wu, L W ^a   Chen, J F ^a   Sheu, J K ^b   Tsai, J M ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c South Epitaxy Corporation   (Taiwan)

Author keywords

Hall measurement; InGaN GaN; LED; SPS; Tunneling contact

Indexed keywords

ELECTRON TUNNELING; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CONTACT LAYERS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0038056269     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.809435     Document Type: Article

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