Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2762-2764

  Chen, Chin Hsiang ^a   Chang, Shoou Jinn ^a   Su, Yan Kuin ^a   Chi, Gou Chung ^b   Sheu, Jinn Kong ^b   Lin, I Chao ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

BCl3; CH4; GaN; Mirrorlike facet; MOCVD; N2; RIE

Indexed keywords

ADDITIVES; ANISOTROPY; BARIUM COMPOUNDS; LIGHT EMITTING DIODES; MORPHOLOGY; OPTOELECTRONIC DEVICES; REACTIVE ION ETCHING; SEMICONDUCTOR PLASMAS; SURFACE ROUGHNESS;

PLASMA SOURCES;

GALLIUM NITRIDE;

EID: 0035300626     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2762     Document Type: Article

References (9)