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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 3 A, 2002, Pages

On the carrier concentration and Hall mobility in GaN epilayers

(10) Ko, Chih Hsin a Chang, Shoou Jinn b Su, Yan Kuin c Lan, Wen How a Chen, Jone F b Kuan, Ta Ming c Huang, Yao Cong a Chiang, Chung I b Webb, Jim c Lin, Wen Jen a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY (Taiwan)

c NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

Defect; GaN; Hall; Laser illumination; Mobility

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; HALL EFFECT; INFRARED RADIATION; LASER BEAMS; LIGHTING; THIN FILMS;

LASER ILLUMINATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17544392720 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l226 Document Type: Article

Times cited : (22)

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