Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15 Ga0.85 N/GaN superlattice

IEEE Electron Device Letters

Volumn 22, Issue 4, 2001, Pages 160-162

  Sheu, J K ^a   Chi, G C ^a   Jou, M J ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

GaN; InGaN; Light emitting diode; Strained layer superlattices

Indexed keywords

ACTIVATION ANALYSIS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HALL EFFECT; HOLE MOBILITY; MAGNESIUM PRINTING PLATES; PIEZOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; SUPERLATTICES;

ACTIVATION EFFICIENCY; LOW-OPERATION VOLTAGE;

LIGHT EMITTING DIODES;

EID: 0035308999     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.915597     Document Type: Article

References (15)

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