Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

Journal of Crystal Growth

Volumn 220, Issue 4, 2000, Pages 405-412

  Subba Ramaiah, K ^a   Su, Y K ^a   Chang, S J ^a   Juang, F S ^b   Chen, C H ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DONOR-ACCEPTOR PAIR (DAP);

SEMICONDUCTING FILMS;

EID: 0343831931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00860-5     Document Type: Article

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