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Volumn 92, Issue 1, 2002, Pages 129-138

Effect of unintentionally introduced oxygen on the electron-cyclotron resonance chemical-vapor deposition of SiN X films

(4) Cova, P a Masut, R A b Grenier, O b Poulin, S b

a UNIVERSIDAD DE ORIENTE (Venezuela)

b ÉCOLE POLYTECHNIQUE DE MONTRÉAL (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED CONDITIONS; COULOMB FORCES; ECR-CVD; ETCH RATES; FLOW RATIOS; HYDROGEN DILUTION; INDUSTRIAL PRODUCTION; INP SUBSTRATES; LOW CONCENTRATIONS; NITROGEN INCORPORATION; NITROGEN RADICAL; OXYGEN ATOM; OXYGEN CONTAMINATION; OXYGEN CONTENT; OXYGEN RADICAL; SI-N BONDS; SILICON DANGLING BOND;

CHEMICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; CRYSTAL ATOMIC STRUCTURE; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; HYDROGEN BONDS; MECHANICAL PROPERTIES; NITROGEN; NITROGEN PLASMA; SILICON; SILICON NITRIDE; SILICON OXIDES; VAPORS;

OXYGEN;

EID: 0036639298 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1483902 Document Type: Article

Times cited : (14)

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