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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 1157-1161

Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications

(3) Desbiens, E a Dolbec, R a El Khakani, M A a

a INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRIC PROPERTIES; FILM GROWTH; GATES (TRANSISTOR); HYDROGEN; LASER ABLATION; PERMITTIVITY; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; TEMPERATURE;

HYDROGEN FREE FILM; POOLE-FRENKEL EMISSION; REACTIVE PULSED LASER DEPOSITION; SILICON OXYNITRIDE;

THIN FILMS;

EID: 0036565352 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1467357 Document Type: Article

Times cited : (22)

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