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Volumn 3467, Issue , 1998, Pages 305-312

Optical active gallium arsenide probes for scanning probe microscopy

Author keywords

GaAs cantilever; GaAs probes for SPM; Microelectromechanical system (MEMS); Microfabrication of miniaturized SPM probes; Scanning near field optical microscopy (SNOM); Scanning probe microscopy (SPM); Spray etching; Ultrafast scanning probe microscopy (USPM); Vertical cavity surface emitting laser diode (VCSEL)

Indexed keywords

ENERGY GAP; ETCHING; LASER BEAMS; LIGHT SOURCES; MICROELECTROMECHANICAL DEVICES; PHOTODIODES; PROBES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; ULTRASHORT PULSES;

EID: 0037879043     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.326832     Document Type: Conference Paper
Times cited : (14)

References (21)
  • 1
    • 0013604351 scopus 로고
    • The concept of an optoelectronic probe for near field microscopy
    • D. W. Pohl and D. Courjon, eds.; Kluwer
    • H. U. Danzebrink and U. C. Fischer, "The concept of an optoelectronic probe for near field microscopy," in Near Field Optics, D. W. Pohl and D. Courjon, eds., p. 303, Kluwer, 1993.
    • (1993) Near Field Optics , pp. 303
    • Danzebrink, H.U.1    Fischer, U.C.2
  • 2
    • 0029310091 scopus 로고
    • Micromachined submicrometer photodiode for scanning probe microscopy
    • R. C. Davis, C. C. Williams, and P. Neuzil, "Micromachined submicrometer photodiode for scanning probe microscopy," Appl. Phys. Lett. 66(18), pp. 2309-2311, 1995.
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.18 , pp. 2309-2311
    • Davis, R.C.1    Williams, C.C.2    Neuzil, P.3
  • 3
    • 67649972063 scopus 로고    scopus 로고
    • Micromachined fabrication of Si cantilevers with Schottky diodes integrated in the tip
    • T. Leinhos, M. Stopka, and E. Oesterschulze, "Micromachined fabrication of Si cantilevers with Schottky diodes integrated in the tip," Appl. Phys. A 66, pp. 65-69, 1998.
    • (1998) Appl. Phys. A , vol.66 , pp. 65-69
    • Leinhos, T.1    Stopka, M.2    Oesterschulze, E.3
  • 4
    • 0029734819 scopus 로고    scopus 로고
    • Scanning near-field optical microscope using an atomic force microscope cantilever with integrated photodiode
    • S. Akamine, H. Kuwano, and H. Yamada, "Scanning near-field optical microscope using an atomic force microscope cantilever with integrated photodiode," Appl. Phys. Lett. 68(5), pp. 579-581, 1996.
    • (1996) Appl. Phys. Lett. , vol.68 , Issue.5 , pp. 579-581
    • Akamine, S.1    Kuwano, H.2    Yamada, H.3
  • 5
    • 0343713362 scopus 로고    scopus 로고
    • Voltage contrast in submicron integrated circuits by scanning force microscopy
    • C. Böhm, J. Sprengepiel, M. Otterbeck, and E. Kubalek, "Voltage contrast in submicron integrated circuits by scanning force microscopy," J. Vac. Sci. Technol. B 14(2), pp. 842-844, 1996.
    • (1996) J. Vac. Sci. Technol. B , vol.14 , Issue.2 , pp. 842-844
    • Böhm, C.1    Sprengepiel, J.2    Otterbeck, M.3    Kubalek, E.4
  • 7
    • 0001255981 scopus 로고    scopus 로고
    • Fabrication and characterization of 100-nm-thick GaAs cantilevers
    • J. G. E. Harris, D. D. Awschalom, K. D. Maranowski, and A. C. Gossard, "Fabrication and characterization of 100-nm-thick GaAs cantilevers," Rev. Sci. Instrum. 67(10), pp. 3591-3593, 1996.
    • (1996) Rev. Sci. Instrum. , vol.67 , Issue.10 , pp. 3591-3593
    • Harris, J.G.E.1    Awschalom, D.D.2    Maranowski, K.D.3    Gossard, A.C.4
  • 10
    • 0000475979 scopus 로고    scopus 로고
    • Gallium arsenide probes for scanning near-field probe microscopy
    • S. Heisig and E. Oesterschulze, "Gallium arsenide probes for scanning near-field probe microscopy," Appl. Phys. A 66, pp. S385-390, 1998.
    • (1998) Appl. Phys. A , vol.66
    • Heisig, S.1    Oesterschulze, E.2
  • 11
    • 0026868725 scopus 로고
    • Etching and optical characteristics in GaAs/GaAlAs surface emitting laser fabrication using a novel spray etch
    • H. Tanobe, F. Koyama, and K. Iga, "Etching and optical characteristics in GaAs/GaAlAs surface emitting laser fabrication using a novel spray etch," Jpn. J. Appl. Phys. 31, pp. 1597-1601, 1992.
    • (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 1597-1601
    • Tanobe, H.1    Koyama, F.2    Iga, K.3
  • 13
    • 0000446983 scopus 로고    scopus 로고
    • Cantilever probes with apertures tips for polarisation sensitive scanning near-field optical microscopy
    • S. Werner, O. Rudow, C. Mihalcea, and E. Oesterschulze, "Cantilever Probes with Apertures Tips for Polarisation Sensitive Scanning Near-field Optical Microscopy," Appl. Phys. A 66, pp. 367-370, 1998.
    • (1998) Appl. Phys. A , vol.66 , pp. 367-370
    • Werner, S.1    Rudow, O.2    Mihalcea, C.3    Oesterschulze, E.4
  • 15
    • 0010969442 scopus 로고    scopus 로고
    • Transient measurements with an ultrafast scanning tunneling microscope on semiconductor surfaces
    • U. D. Keil, J. R. Jensen, and J. M. Hvam, "Transient measurements with an ultrafast scanning tunneling microscope on semiconductor surfaces," Appl. Phys. Lett. 72(13), pp. 1644-1646, 1998.
    • (1998) Appl. Phys. Lett. , vol.72 , Issue.13 , pp. 1644-1646
    • Keil, U.D.1    Jensen, J.R.2    Hvam, J.M.3
  • 16
    • 0000266883 scopus 로고    scopus 로고
    • The capacitive origin of the picosecond electrical transients detected by a photoconductively gated scanning tunneling microscope
    • R. H. M. Groeneveld, and H. van Kempen, "The capacitive origin of the picosecond electrical transients detected by a photoconductively gated scanning tunneling microscope," Appl. Phys. Lett. 69(15), pp. 2294-2296, 1996.
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.15 , pp. 2294-2296
    • Groeneveld, R.H.M.1    Van Kempen, H.2
  • 18
    • 0001703710 scopus 로고    scopus 로고
    • Measuring voltage transients with an ultrafast scanning tunneling microscope
    • U. D. Keil, J. R. Jensen, and J. M. Hvam, "Measuring voltage transients with an ultrafast scanning tunneling microscope," Appl. Phys. Lett. 70(19), pp. 2625-2627, 1997.
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.19 , pp. 2625-2627
    • Keil, U.D.1    Jensen, J.R.2    Hvam, J.M.3
  • 21
    • 0041897551 scopus 로고
    • Device applications of low-temperature-grown GaAs
    • G. L. Witt, A. R. Calawa, U. K. Mishra, and E. R. Weber, eds.; Material Research Society
    • F. W. Smith, "Device applications of low-temperature-grown GaAs," in Low Temperature (LT) GaAs and related materials, G. L. Witt, A. R. Calawa, U. K. Mishra, and E. R. Weber, eds., pp. 3-11, Material Research Society, 1992.
    • (1992) Low Temperature (LT) GaAs and Related Materials , pp. 3-11
    • Smith, F.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.