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Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

Galliumarsenide probes for scanning near-field probe microscopy

(2) Heisig, S a Oesterschulze, E a

a UNIVERSITY OF KASSEL (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE SCANNING; DIRECT BAND GAP; ELECTRICAL LOSS; ELECTRICAL RESISTANCES; ETCHING BEHAVIOR; HIGH ASPECT RATIO; HIGH ELECTRON MOBILITY; HIGH FREQUENCY DEVICES; HIGH FREQUENCY MEASUREMENTS; III/V SEMICONDUCTORS; LASER DIODES; NEAR FIELD PROBES; OPTICAL CHARACTERIZATION; PROBE MATERIALS; RADIUS OF CURVATURE; SCHOTTKY DIODE PROBE; SCHOTTKY DIODES; SEMI-INSULATING GAAS; SENSOR DESIGNS; TIP APEX; TIP SHAPE;

ASPECT RATIO; DIODES; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM ALLOYS; LIGHT EMITTING DIODES; LOSS PREVENTION; MICROWAVE SENSORS; MICROWAVES; NANOCANTILEVERS; OPTICAL PROPERTIES; OPTICAL SENSORS; PROBES; SCANNING; SCANNING PROBE MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON NITRIDE; SURFACE ROUGHNESS;

GALLIUM ARSENIDE;

EID: 0000475979 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s003390051169 Document Type: Article

Times cited : (23)

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