Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O

Applied Physics Letters

Volumn 82, Issue 20, 2003, Pages 3508-3510

  Conley Jr , J F ^a   Ono, Y ^a   Solanki, R ^b   Stecker, G ^a   Zhuang, W ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRON TRAPS; LEAKAGE CURRENTS; MOS DEVICES; SILICA; SILICON WAFERS; THIN FILMS; WATER;

ATOMIC LAYER DEPOSITION (ALD);

HAFNIUM COMPOUNDS;

EID: 0037711188     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1575934     Document Type: Article

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