Photomask dimensional metrology in the SEM: Has anything really changed?

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 1, 2002, Pages 293-308

  Postek, Michael T ^a   Vladár, András E ^a   Bennett, Marylyn Hoy ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Charging; Critical dimension; Metrology; Photomask; Scanning electron microscope; SEM

Indexed keywords

ELECTRON BEAMS; INTEGRATED CIRCUITS; LITHOGRAPHY; MASKS; MEASUREMENTS; PHASE SHIFT; SCANNING ELECTRON MICROSCOPY;

PHOTOMASKS;

ELECTRON MICROSCOPES;

EID: 0037652083     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.467760     Document Type: Article

References (49)

1. Bullis, W. M. and Nyyssonen, D. 1982. Optical linewidth measurements on photomasks and wafers. In: Einspruch N. G. (ed.) 1982 VLSI Electronics: Micro-structure Science, Vol. 3 Academic Press, New York, Chap 7 pp301-46.
2. th Conférence Générale des Poids et Mesures, (1983), Resolution 1. http://www.bipm.fr
3. Croarkin, M. C. and Varner, R. N. 1982. Measurement Assurance for dimensional measurements on integrated-circuit photomasks. NIST Technical Note 1164 National Bureau of Standards, Gaithersburg, MD.
4. Danilatos, G.D. 1988. Foundations of Environmental Scanning Electron Microscopy, Adv. Electronics and Electron Physics. 71:109-250.
5. Danilatos, G.D. 1993. Introduction to the ESEM Instrument. Microsc. Res. and Tech. 25:354-361.
6. Davidson, M and Sullivan, N. 1997. An investigation of the effects of charging in SEM based CD metrology. Proceedings SPIE 3050:226-242.
7. Davidson, M. and Vladár, A. 1999. An inverse scattering approach to SEM linewidth measurements. Proceedings SPIE 3677:640-645.
8. Davidson, M. P. and Vladár, A. E. 1999. An inverse scattering approach to SEM Line width measurements. Proc. SPIE 3677:640-649.
9. Dixson, R., Guerry, A., Bennett, M., Vorburger, T. and Postek, M. T. 2002. Toward traceability for at-line AFM dimensional metrology. Proc. SPIE 4689: (in press).
10. Farrow, R. C., Postek, M. T., Keery, W. J., Jones, S. N., Lowney, J. R., Blakey, M., Fetter L. Hopkins, L. C., Huggins, H. A., Liddle, J. A., Novembre, A. E., and Peabody, M. 1997. Application of transmission electron detection to SCALPEL mask metrology. J. Vac. Science and Technol. B. 15(6):2167-2172.
11. International Organization for Standardization (ISO). 1993. International Vocabulary of Basic and General Terms in Metrology second edition.
12. Joy, D. C. 2002. The future of e-beam metrology: obstacles and opportunities. Proceedings SPIE 4689:1-10.
13. Ko, Y-U and Chung, M-S 1999. Monte Carlo simulation of charging effects in linewidth metrology (II) on insulator substrate. Proc. SPIE 3677: 650-660.
14. Ko, Y-U, Kim, S. W. and Chung, M-S. 1998. Monte Carlo simulation of charging effects during observation of trench structures by scanning electron microscope. Scanning 20: 447-455.
15. Ko, Y-U, and Chung, M-S. 1998. Monte Carlo simulation of charging effects in linewidth metrology (II) on insulator substrate. Scanning 20: 549-555.
16. Larrabee, R. D. and Postek, M. T. 1993a. Parameters characterizing a critical dimension measurement. SPIE Critical Review CR52 pg. 2-25.
17. Larrabee, R. D. and Postek, M. T. 1993b. Precision, accuracy, uncertainty and traceability and their application to submicrometer dimensional metrology. Solid-State Elec. 36(5):673-684.
18. Larrabee R. D. and Postek, M. T. 1994. Parameters Characterizing the Measurement of a Critical Dimension, in Vol. CR52, Handbook of Critical Dimension Metrology and Process Control, Kevin M. Monahan, ed. SPIE Optical Engineering Press, Bellingham, WA.
19. Liddle, J. A. Blakey, M. I., Saunders, T., Farrow, R. C., Fetter, L. A., Knurek, C. S., Novembre, A. E., Peabody, M. L.Windt D. L. and. Postek M. T. 1997. Metrology of SCALPEL masks. J. Vac. Science and Technol. B. 15(6):2197-2203.
20. Lowney, J. R. 1996. Application of Monte Carlo simulations to critical dimension metrology in a scanning electron microscope. Scanning Microscopy 10(3):667-678.
21. Lowney, J. R., Postek, M. T. and Vladár A. E. 1995. Workshop report 3: Edge positions from scanning electron microscope signals by comparing models with measurements. MAS Proceedings (Edgar Etz, editor) 343-344.
22. Mack, C. A. and Schellenberg, F. M. 2000. Impact of mask errors on optical lithography. Yield Management Solutions Magazine 2(2):57-61.
23. Moore, G. E. 1995. Lithography and the future of Moore's Lew. Proceedings SPIE Microlithography 2439: 2-17.
24. Moore, G. E. 1965. Cramming more components onto integrated circuits. Electronics 4:114-117.
25. Nyyssonen, D. 1977. Linewidth measurement with an optical microscope; effect of operating conditions on the image profile. Appl. Optics 16:2223-2230.
26. Nyyssonen, D. 1979. Spatial coherence: The key to accurate optical micro-metrology. Proceedings SPIE 194:34-44.
27. Nyyssonen, D. and Larrabee, R. D. 1987. Sub-micrometer linewidth metrology in the optical microscope. NBS J. J. Res. 92(3):187-204.
28. Postek, M. T. and Larrabee, R. D. 1992. Fine-Line Metrology. Concise Encyclopedia of Semiconducting Materials and Related Technologies pp 176-184 (S. Mahajan and L. Kimmerling, ed.) Pergamon Press, New York, N.Y.
29. Postek, M. T. 1984a. Critical Dimension Measurement in the Scanning Electron Microscope. SPIE Proceedings Vol. 480:109-118.
30. Postek, M. T. 1984b. Low Accelerating Voltage Inspection and Linewidth Measurement in the Scanning Electron Microscope. SEM/1984/III, SEM, Inc. 1065-1074.
31. Postek, M. T. 1997. The Scanning Electron Microscope. Handbook of Charged Particle Optics, (ed. Jon Orloff) CRC Press, Inc., New York. 363-399.
32. Postek, M. T. 1994. Critical Issues in Scanning Electron Microscope Metrology. NIST J. Res. 99(5): 641-671.
33. Postek, M. T. and Joy, D. C. 1987. Sub-micrometer microelectronics dimensional metrology: scanning electron microscopy. NBS J. Res. 92(3): 205-228.
34. Postek, M. T. and A. E. Vladár. 2000. Critical Dimension Metrology in the Scanning Electron Microscope. Handbook of Silicon Semiconductor Metrology (Alain Diebold, ed.) Chapter 14. 295-333. Marcel Dekker, New York.
35. Postek, M. T., Vladár, A. E., Lowney, J., Larrabee, R. D. and Keery, W. J. 1998. Inverse electron beam modeling and metrology research. SCANNING 20(3):217
36. Postek, M. T., Lowney, J. R., Vladár, A- E., Keery, W. J., Marx, E. and Larrabee, R. D. 1993a. X-ray lithography mask metrology: use of transmitted electrons in an SEM for linewidth measurement. NIST J. Res. 98(4):415-445.
37. Postek, M. T., Lowney, J., Vladár, A., Keery, W. J., Marx, E. and Larrabee, R. 1993b. X-ray mask Metrology: The development of linewidth standards for x-ray lithography. Proceedings SPIE 1924:435-449.
38. Postek, M. T., A. E. Vladár and J. Villarrubia. 2000. Is a production critical scanning electron microscope linewidth standard possible? Proc. SPIE 3988:42-56.
39. Potzick, J. 2002. New NIST photomask linewidth standard. (This volume).
40. Potzick, J. 1995. Improved photomask metrology through exposure emulation. Proceedings SPIE 2512:274-280.
41. Semiconductor Industry Association. 2001. International Technology Roadmap for Semiconductors 2001 Edition. http://public.itrs.net.
42. Starikov, A. 2002. Model-based WYSIWYG: Dimensional metrology infrastructure for design and integration. Proceedings SPIE (in press).
43. Swyt, D. 1978. An NIST physical standard for the calibration of photomask linewidth measuring systems. Proceedings SPIE 129:98-105.
44. Taylor, B. and Kuyatt, C. 1994. Guidelines for Evaluating and Expressing the Uncertainty of NIST Measurement Results. NIST Technical Note 1297.
45. Villarrubia, J. S. Vladár, A. E., Lowney, J. R. and Postek, M. T. 2002. A scanning electron microscope analog of scatterometry. SPIE 4689 304-312.
46. Villarrubia, J. S., Vladár, A. E., Lowney, J. R. and Postek, M. T. 2001. Edge determination for polysilicon lines on gate oxide. SPIE 4344:147-156.
47. Villarrubia, J. S., Vladár, A. E., Lowney, J. R., Postek, M. T., Allen, R. A., Cresswell, M. W. and Ghoshtagore, R. N. 2000. Linewidth Measurement Intercomparison on a BESOI Sample. Proc. SPIE 3998:84-95.
48. Villarrubia J. S., Dixson R., Jones S., Lowney J. R., Postek M. T., Allen R. A., and Cresswell. 1999. Inter-comparison of SEM, AFM, and Electrical Linewidths. Proceedings of SPIE Vol. 3677, pp. 587-598 (1999).
49. Vladár, A. E., Postek, M. T. and Vane, R., Active Monitoring and Control of Electron Beam Induced Contamination; 2001 SPIE 4344. 835-843