Monte Carlo simulation of charging effects on linewidth metrology

Scanning

Volumn 20, Issue 6, 1998, Pages 447-455

  Ko, Yeong Uk ^a   Kim, Seung Woo ^b   Chung, Myung Sae ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Charging effects; Linewidth measurement; Monte Carlo simulation; Scanning electron microscopes; Secondary electrons

Indexed keywords

POLY(METHYL METHACRYLATE);

ARTICLE; ELECTRIC FIELD; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SYSTEM ANALYSIS;

EID: 0031739732     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.1998.4950200605     Document Type: Article

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