Investigation of the effects of charging in SEM-based CD metrology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3050, Issue , 1997, Pages 226-242

  Davidson, Mark P ^a   Sullivan, Neal T ^b  

^a Spectel Company   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING MATERIALS; ELECTRIC FIELDS; ELECTRON MICROSCOPES; ELECTRONS; INSULATION; MEASUREMENT ERRORS; MEASUREMENTS; MONTE CARLO METHODS; SCANNING; SCANNING ELECTRON MICROSCOPY;

BEAM DEFLECTIONS; CD METROLOGIES; CHARGING EFFECTS; ELECTROSTATIC FIELDS; EQUIPOTENTIAL SURFACES; EXPERIMENTAL DATUM; LINE-WIDTHS; MONTE CARLO SIMULATIONS; PRIMARY BEAMS; PRIMARY ELECTRONS; SCANNING ELECTRON MICROSCOPES; SEM; SHRINKING DESIGN RULES; STANDING PROBLEMS; STRONG ELECTRIC FIELDS;

PROCESS CONTROL;

EID: 0037592673     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.275912     Document Type: Conference Paper

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