Application of Monte Carlo simulations to critical dimension metrology in a scanning electron microscope

Scanning Microscopy

Volumn 10, Issue 3, 1996, Pages 667-678

  Lowney, Jeremiah R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Critical dimension metrology; Linewidth; Lithography; Monte Carlo; Scanning electron microscope

Indexed keywords

SILICON;

ARTICLE; COMPUTER SIMULATION; ELECTRON BEAM; ELECTRON MICROSCOPY; MEASUREMENT; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SYSTEM ANALYSIS;

EID: 0030316884     PISSN: 08917035     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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