The future of e-beam metrology: Obstacles and opportunities

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4689 I, Issue , 2002, Pages 1-10

  Joy, David C ^a  

^a UNIVERSITY OF TENNESSEE   (United States)

Author keywords

CD SEM; Charging; Imaging; Metrology; Radiation damage; Spectroscopy

Indexed keywords

IMAGING TECHNIQUES; PROCESS CONTROL; RADIATION DAMAGE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS;

ELECTRON-BEAM METROLOGY;

ELECTRON BEAMS;

EID: 0036030235     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.473408     Document Type: Conference Paper

References (21)

1. 2001 International Technology Road Map for Semiconductors, Semiconductor Industry Association.
2. Vladar A. and Postek M., "Nanotips for Production CD-SEMS", Report to ISMT Metrology Council, 2001.
3. M.W. Geis, N.N. Efremow, J.D. Woodhouse and M.D. McAleese, 'A stable negative affinity electron source', IEEE Electron Device Letters 12, (1991), pp 456-459.
4. J. Zach and M. Haider, '"Aberration correction in a low voltage SEM", Nucl. Instrum. and Methods A363, pp 316-329, 1995.
5. O.L. Krivanek, N. Dellby, and A.R. Lupini, "Towards sub-angstrom electron beams", Ultramicroscopy 78, pp 1-12, 1999.
6. A. Henstra and M.C.P.M. Krijn, "Aberration Corrrectors for Electron Microscopy', Proc. EUREM XII, 3, pp 155-156, 2000.
7. M. Sato and F. Mizuno, "Depth of field at high magnification of Scanning Electron Microscope", Proc. EIPBN 2000, Palm Springs CA., pp 35-40, 2000.
8. S. Joens, "The Hitachi ExB filter", Micros. and Microanalysis 7, Suppl. 2, pp 875-876, 2001.
9. C.N. Archie, personal communication.
10. J. Cazaux, "Charging under electron beams", J. Appl.Phys. 59, pp 1418-1432, 1986.
11. D.C. Joy and C.S. Joy, "Low voltage scanning microscopy", Micron 27, pp 247-263, 1996.
12. R. Dixson, R. Koning, J. Fu, T. Vorburger and B. Renegar, "Accurate dimensional metrology with Atomic Force Microscopy", in Metrology, Inspection and Process Control for Microlithography XIV, N T Sullivan ed., Proc. SPIE 3998, pp 362-368, 2000.
13. Frost B.G., and Joy D.C.,"Three dimensional metrology by off-axis electron holography", Proc. EIPBN Meeting, (in press), 2001.
14. J. Allgair, D. Benoit, R. Hershey, L. CL Litt, I. Abdulhalim, B. Brayner, M. Faeyrman, J.C. Robinson, U. Whitney, Y. Xu, P. Zalicki and J. Seligson, "Manufacturing Considerations for Implementation of Scatterometry for Process Monitorin" in Metrology, Inspection and Process Control for Microlithography XIV, (N.T. Sullivan ed.), Proc. SPIE 3998,pp 125-134,2000.
15. M.P. Davidson, Spectel Company, Mountain View, CA.
16. Tobin, K.W., Bingham, P.R., Price, J.R., and Bennett, M.H., "An Application of Image Retrieval Technology to Sidewall Structure Estimation from Top-down SEM Imagery", SCANNING, The Journal of Scanning Microscopies, 23, No. 2, pp 91-92, 2001.
17. J.S. Villarrubia, A.E. Vladar, J.R. Lowney, M.T. Postek, R.A. Allen, M.W. Cresswell, R.N. Ghostagore, "Linewidth measurement intercomparison on a BESOI sample", in metrology, Inspection and Process Control XIV, N T Sullivan ed., SPIE 3998, pp 84-96, 2000.
18. Frost B.G., Thesen A., Joy D.C., "Electron Interferometry with a Point Projection Microscope", these proceedings, 2002.
19. D.A. Muller, "Gate Dielectric Metrology using advanced TEM measurements", in Characterization and Metrology for ULSI Technology 2000, eds D.G. Seiler, A.C. Diebold, T.J. Schaffner, R. McDonald, W.M. Bullis, P.J. Smith, and E.M. Secula, AIP Conference Proceedings 550, pp 500-505, 2000.
20. Rau W.D., Schwander P., Baumann F.H., Hoppner W., and Ourmazd A., "Two dimensional mapping of the electrostatic potential in transistors by electron holography", Phys.Rev. Letters 82 (12), 2614-2617, 1999.
21. M.K. Miller, 'Atom Probe Field Ion Microscopes', Oxford University Press, 1996.