Edge determination for polycrystalline silicon lines on gate oxide

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4344, Issue , 2001, Pages 147-156

  Villarrubia, J S ^a   Vladar A E ^a   Lowney, J R ^a   Postek, M T ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Critical dimension (CD); Independent edges approximation; Library based metrology; Line shape; Linewidth metrology; Scanning electron microscopy (SEM)

Indexed keywords

EDGE DETECTION; ELECTRON BEAMS; ETCHING; GATES (TRANSISTOR); MATHEMATICAL MODELS; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SUBSTRATES;

LINEWIDTH METROLOGY;

POLYSILICON;

EID: 0034757352     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436738     Document Type: Conference Paper

References (10)

1. Linewidth measurement intercomparison on a BESOI sample
2. Application of Monte Carlo simulations to critical dimension metrology in a scanning electron microscope
3. Multiparameter grating metrology using optical scatterometry
4. Design of an atomic force microscope with interferometric position control
5. Accurate dimensional metrology with atomic force microscopy