The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films

Materials Chemistry and Physics

Volumn 80, Issue 2, 2003, Pages 397-400

  Lin, Pei Yen ^a   Sermon Wu, YewChung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Epitaxial lateral overgrowth; GaN; Growth mechanism; Hydride vapor phase epitaxy; V defect

Indexed keywords

CRYSTAL DEFECTS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

FILM THICKNESS;

GALLIUM NITRIDE;

EID: 0037467538     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(03)00109-3     Document Type: Article

References (25)

1. Nakamura S., Senoh M., Iwasa N., Nagahama S. Jpn. J. Appl. Phys., Part 2. 34:1995;L797.
2. Grandjean N., Lerous M., Laugt M., Massies J. Appl. Phys. Lett. 71:1997;240.
3. Naniwae K., Itoh S., Amano H., Itoh K., Hiramatsu K., Akasaki I. J. Cryst. Growth, Part 1. 99(1-4):1990;381.
4. Wu X.H., Brown L.M., Kapolnek D., Keller S., Keller B., DenBaars S.P., Speck J.S. J. Appl. Phys. 80:1996;3228.
5. Potin V., Ruterana P., Nouet G. J. Appl. Phys. 82:1997;2176.
6. Sharma N., Thomas P., Tricker D., Humphreys C. Appl. Phys. Lett. 77:2000;1274.
7. Mahanty S., Hao M., Sugahara T., Fareed R.S.Q., Morishima Y., Naoi Y., Wang T., Sakai S. Mater. Lett. 41:1999;67.
8. Chen Y., Takeuchi T., Amano H., Akasaki I., Yamada N., Kaneko Y., Wang S.Y. Appl. Phys. Lett. 72:1998;710.
9. Wu X.H., Elsass C.R., Abare A., Mack M., Keller S., Petroff P.M., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 72:1998;692.
10. Cho H.K., Lee J.Y., Yang G.M., Kim C.S. Appl. Phys. Lett. 79:2001;215.
11. Liliental-Weber Z., Chen Y., Ruvimov S., Washburn J. Phys. Rev. Lett. 79:1997;2835.
12. Lin Y.S., Ma K.-J., Hsu C., Feng S.-W., Cheng Y.-C., Liao C.-C., Yang C.C., Chou C.-C., Lee C.-M., Chyi J.-I. Appl. Phys. Lett. 77:2000;2988.
13. Morkoc H. Mater. Sci. Eng. R-Rep. 33:2001;135.
14. Fang H., Tsai J.Y., Wang Y.K., Chu C.F., Wang S.C. Proc. SPIE. 3899:1999;79.
15. S.-C. Chang, M.S. Dissertation, National Chiao Tung University, 2001.
16. Zheleva T.S., Nam O.-H., Ashmawi W.M., Griffin J.D., Davis R.F. J. Cryst. Growth. 222:2001;706.
17. Kapolnek D., Keller S., Underwood R.D., DenBaars S.P., Mishra U.K. J. Cryst. Growth. 189/190:1998;83.
18. Wang J., Nozaki M., Ishikawa Y., Hao M.S., Morishima Y., Wang T., Naoi Y., Sakai S. J. Cryst. Growth. 197:1999;48.
19. Beaumont B., Gibart P., Vaille M., Haffouz S., Nataf G., Bouille A. J. Cryst. Growth. 189/190:1998;97.
20. H. Matsushima, M. Yamaguchi, K. Hiramatsu, N. Sawaki, J. Cryst. Growth 189 (1998) 78.
21. Hiramatsu K., Matsushima H., Shibata T., Kawagachi Y., Sawaki N. Mater. Sci. Eng. B. 59:1999;104.
22. Kawaguchi Y., Nambu S., Sone H., Shibata T., Matsushima H., Yamaguchi M., Miyake H., Hiramatsu K., Sawaki N. Jpn. J. Appl. Phys., Part 2. 37:1998;L845.
23. Chiang, D. Birnie III, W.D. Kingery, Physical Ceramics: Principle for Ceramic Science and Engineering, Wiley, New York, 1997, p. 354.
24. Sasaoka C., Sunakawa H., Kimura A., Nido M., Usui A., Sakai A. J. Cryst. Growth. 180/190:1998;61.
25. Usui A., Sunakawa H., Sakai A., Yamaguchi A.A. Jpn. J. Appl. Phys., Part 2. 36:1997;L899.