Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3899, Issue , 1999, Pages 79-83

  Fang, Huimei ^a   Wang, Y K ^a   Tsai, R Y ^a   Chu, C F ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; LIGHT EMISSION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

FULL WIDTH AT HALF MAXIMUM (FWHM); HYDRIDE VAPOR PHASE EPITAXY;

OPTOELECTRONIC DEVICES;

EID: 0033331509     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.369439     Document Type: Conference Paper

References (6)