Reduced pressure chemical vapour deposition of Si/Si1-x-yGexCy heterostructures using a chlorinated chemistry

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages 352-360

  Loup, V ^a   Hartmann, J M ^a   Rolland, G ^a   Holliger, P ^a   Laugier, F ^a   Lafond, D ^a   Semeria M N ^a   Besson, P ^b   Gentile, P ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHEMISTRY; MECHANICAL PROPERTIES; PRESSURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTITUTION REACTIONS; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

CHLORINATED CHEMISTRY; DICHLOROSILANE;

HETEROJUNCTIONS;

EID: 0037394234     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/328     Document Type: Article

References (52)

1. Hull R and Bean J C 1999 Germanium Silicon: Physics and Materials (Semiconductors and Semimetals vol 56) ed R K Willadson and E R Weber (San Diego, CA: Academic)
2. Maiti C K, Bera L K and Chattopadhyay S 1998 Semicond. Sci. Technol. 13 1225
3. Colace L, Masini G and Assanto G 1999 IEEE J. Quantum Electron. 35 1843
4. Miyano K, Mizushima I, Ohuchi K, Hokazano A and Tsunashima Y 1999 Japan. J. Appl. Phys. 38 2419
5. Whall T E and Parker E H C 2000 Thin Solid Films 368 297
6. Lander R J P, Ponomarev Y V, Van Berkum J G M, De Boer W P, Loo R and Caymax M 2000 J. Appl. Phys. 88 2016
7. Soref R A 1993 Proc. IEEE 81 1687
8. Galdin S, Dollfus P, Aubry-Fortuna V, Hesto P and Osten H J 2000 Semicond. Sci. Technol. 15 565
9. Iyer S S, Eberl K, LeGoues F K, Tsang J C and Cardone F 1992 Appl. Phys. Lett. 60 356-8
10. Olesinski R W and Abbaschian G J 1984 Bull. Alloy Phase Diag. 5 484
11. Posthill J B, Rudder R A, Hattangady S V, Fountain G G and Markunas R J 1990 Appl. Phys. Lett. 56 734
12. Osten H J, Bugiel E and Zaumsell P 1994 Appl. Phys. Lett. 64 3440
13. Mi J, Warren P, Letourneau P, Judelewicz M, Gailhanou M, Dutoit M, Dubois C and Dupuy J C 1995 Appl. Phys. Lett. 67 259
14. Regolini J L, Bensahel D and Mercier J 1989 Mater. Sci. Eng. B 4 407
15. Goulding M R 1993 Mater. Sci. Eng. B 17 47
16. Vescan L 1994 Mater. Sci. Eng. B 28 1
17. Regolini J L, Gisbert F, Dolino G and Boucaud P 1993 Mater. Lett. 18 57
18. Hoyt J L, Mitchell T O, Rim K, Singh D V and Gibbons J F 1998 Thin Solid Films 321 41
19. Hartmann J M, Ernst T, Loup V, Ducroquet F, Rolland G, Lafond F, Holliger P, Laugier F, Séméria M N and Deleonibus S 2002 J. Appl. Phys. 92 2368
20. Bodnar S and Regolini J L 1995 J. Vac. Sci. Technol. A 13 2336
21. Mitchell T O, Hoyt J L and Gibbons J F 1997 Appl. Phys. Lett. 71 1688
22. Kanzawa Y, Nozawa K, Saitoh T and Kubo M 2000 Appl. Phys. Lett. 77 3962
23. LeThanh Vinh, Calmes C, Zheng Y and Bouchier D 2002 Appl. Phys. Lett. 80 43
24. Calmes C, Bouchier D and Debarre D 2002 Thin Solid Films at press
25. Loup V, Hartmann J M, Rolland G, Holliger P, Laugier F, Vannuffel C and Séméria M N 2002 J. Vac. Sci. Technol. B 20 1048
26. Loup V, Hartmann J M, Rolland G, Holliger P, Laugier F and Séméria M N 2003 J. Vac. Sci. Technol. B 21 246
27. Hartmann J M, Loup V, Rolland G, Holliger P, Laugier F, Vannuffel C and Séméria M N 2002 J. Cryst. Growth 236 10
28. Holliger P, Laugier F and Dupuy J C 2002 Surf. Interface Anal. 34 472
29. Fewster P F and Curling C J 1987 J. Appl. Phys. 62 4154
30. Tardif F, Lardin T, Abolafia Y, Danel A, Boelen P, Cowache C, Kashkoush I and Novak R 1999 Diffusion-and-Defect-Data Part-B 65-66 19
31. Tardif F, Lardin T, Abolafia Y, Danel A, Boelen P, Cowache C, Kashkoush I and Novak R 1996 Proc. 3rd Int. Sym. Ultra-Clean Processing of Silicon Surfaces (UCPSS'96) (Leuven, Belgium, 1996) p 175
32. Mur P, Séméria M N, Olivier M, Papon A M, Leroux Ch, Reimbold G, Gentile P, Magnéa N, Baron T, Clerc R and Ghibaudo G 2001 Appl. Surf. Sci. 175-6 726
33. 2 Advanced Dielectrics (Trente, Italy, Sept. 2002) J. Non-Cryst. Mater. at press
34. Yokohama K, Ochi T, Yoshimoto A, Sugawara Y and Morita S 2000 Japan. J. Appl. Phys. 39 L113
35. Mo Y W and Lagally M G 1991 Surf. Sci. 248 313
36. Voigtländer B, Weber T, Šmilauer P and Wolf D E 1997 Phys. Rev. Lett. 78 2164
37. Voigtländer B 2001 Surf. Sci. Rep. 43 127
38. Sinniah K, Sherman M G, Lewis L B, Weinberg W H, Yates J T Jr and Janda K C 1989 Phys. Rev. Lett. 62 567
39. Surnev L and Tikhov M 1984 Surf. Sci. 138 40
40. Eres G and Sharp J W 1993 J. Vac. Sci. Technol. A 11 2463
41. Hartmann J M, Champay F, Loup V, Rolland G and Séméria M N 2002 J. Cryst. Growth 241 93
42. Goorsky M S, Iyer S S, Eberl K, Legoues F, Angigello J and Cardone F 1992 Appl. Phys. Lett. 60 2758
43. Strane J W, Stein H J, Lee S R, Picraux S T, Watanabe J K and Mayer J W 1994 J. Appl. Phys. 76 3656
44. Fischer G G, Zaumseil P, Bugiel E and Osten H J 1995 J. Appl. Phys. 77 1934
45. Zhong Y, Öztürk M C, Grider D T, Wortman J J and Littlejohn M A 1990 Appl. Phys. Lett. 57 2092
46. de Boer W B and Meyer D J 1991 Appl. Phys. Lett. 58 1286
47. Kamins T I and Meyer D J 1991 Appl. Phys. Lett. 59 178
48. Garone P M, Sturm J C, Schwartz P V, Schwartz S A and Wilkens B J 1990 Appl. Phys. Lett. 56 1275
49. Matutinović-Krstelj Ž, Chason E and Sturm J C 1995 J. Electron. Mater. 24 725
50. Hartmann J M, Rolland G and Séméria M N 2002 J. Vac. Sci. Technol. B submitted
51. Osten H J, Griesche J and Scalese S 1999 Appl. Phys. Lett. 74 836
52. Suh K Y and Lee H H 2000 J. Appl. Phys. 88 4044