Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 726-733

  Mur, P ^a   Semeria, M N ^a   Olivier, M ^a   Papon, A M ^a   Leroux, Ch ^a   Reimbold, G ^a   Gentile, P ^b   Magnea, N ^b   Baron, T ^c   Clerc, R ^d   Ghibaudo, G ^d  

^a CEA LETI   (France)

^b CEA GRENOBLE   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^d Grenoble INP Phelma   (France)

Author keywords

Interface structure and roughness; Oxidation

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SILICA; SURFACE STRUCTURE; THERMOOXIDATION;

RAPID THERMAL OXIDATION; ULTRATHIN OXIDES;

ULTRATHIN FILMS;

EID: 0035873346     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00081-2     Document Type: Article

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