Growth temperature dependence of substitutional carbon incorporation in SiGeC/Si heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 246-253

  Loup, V ^a   Hartmann, J M ^a   Rolland, G ^a   Holliger, P ^a   Laugier, F ^a   Semeria M N ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; COMPRESSIVE STRESS; GROWTH (MATERIALS); SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON COMPOUNDS; SUBSTITUTION REACTIONS; TENSILE STRENGTH; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

CARBON INCORPORATION RATIO; GROWTH TEMPERATURE DEPENDENCE; SUBSTITUTIONAL CARBON INCORPORATION;

HETEROJUNCTIONS;

EID: 0037207697     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1541605     Document Type: Article

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