Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy heterojunctions grown by rapid thermal chemical vapor deposition

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 41-46

  Hoyt, J L ^a   Mitchell, T O ^a   Rim, K ^a   Singh, D V ^a   Gibbons, J F ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

Chemical vapor deposition; Electrical properties; Epitaxy; Silicon

Indexed keywords

BAND STRUCTURE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ALLOYS; X RAY DIFFRACTION ANALYSIS;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTIONS;

EID: 0032068004     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00440-4     Document Type: Article

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