Substitutional carbon incorporation in epitaxial Si1-yCy alloys on Si(001) grown by molecular beam epitaxy

Applied Physics Letters

Volumn 74, Issue 6, 1999, Pages 836-838

  Osten, H J ^a   Griesche, J ^a   Scalese, S ^b  

^a IHP   (Germany)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000148888     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123384     Document Type: Article

References (10)

1. S. C. Jain, H. J. Osten, B. Dietrich, and H. Rücker, Semicond. Sci. Technol. 10, 1289 (1995).
2. H. J. Osten, M. Kim, K. Pressel, and P. Zaumseil, J. Appl. Phys. 80, 6711 (1996).
3. M. W. Dashiell, L. V. Kulik, D. Hits, J. Kolodzey, and G. Watson, Appl. Phys. Lett. 72, 833 (1998).
4. S. Zerlauth, H. Seyringer, C. Penn, and F. Schaffler, Appl. Phys. Lett. 71, 3826 (1997).
5. T. O. Mitchell, J. L. Hoyt, and J. F. Gibbons, Appl. Phys. Lett. 71, 1688 (1997).
6. H. J. Osten and P. Gaworzewski, J. Appl. Phys. 82, 4977 (1997).
7. R. C. Newman, Mater. Sci. Eng., B 36, 1 (1996).
8. H. J. Osten, G. Lippert, D. Knoll, R. Barth, B. Heinemann, H. Rücker, and P. Schley, Tech. Dig. Int. Electron Devices Meet. 1997, 803.
9. P. D. Zavitsanos and G. A. Carlson, J. Chem. Phys. 59, 2966 (1972).
10. A. R. Powell, K. Eberl, B. A. Ek, and S. S. Iyer, J. Cryst. Growth 127, 425 (1993).