Reduced pressure chemical vapor deposition of Si1-x-yGexCy/Si and Si1-yCy/Si heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1048-1054

  Loup, V ^a   Hartmann, J M ^a   Rolland, G ^a   Holliger, P ^a   Laugier, F ^a   Vannuffel, C ^a   Semeria M N ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRON TRANSPORT PROPERTIES; MORPHOLOGY; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; STRAIN; X RAY DIFFRACTION ANALYSIS;

STRAIN COMPENSATION;

HETEROJUNCTIONS;

EID: 0035998553     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1481755     Document Type: Conference Paper

References (26)