Substitutional carbon incorporation in epitaxial Si1-yCy layers grown by chemical vapor deposition

Applied Physics Letters

Volumn 71, Issue 12, 1997, Pages 1688-1690

  Mitchell, T O ^a   Hoyt, J L ^a   Gibbons, J F ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001167932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119794     Document Type: Article

References (18)

1. S. S. Iyer, K. Eberl, A. R. Powell, and B. A. Ek, Microelectron. Eng. 19, 351 (1992).
2. M. Ershov and V. Ryzhii, J. Appl. Phys. 76, 1924 (1994).
3. T. Nozaki, Y. Yatsurugi, and N. Akiyama, J. Electrochem. Soc. 117, 1566 (1970).
4. A. R. Bean and R. C. Newman, J. Phys. Chem. Solids 32, 1211 (1971).
5. S. S. Iyer, K. Eberl, M. S. Goorsky, F. K. Legoues, F. Cardone, and B. A. Ek, in Silicon Molecular Beam Epitaxy Symposium Proceedings, edited by J. C. Bean, S. S. Iyer, and K. L. Wang (Materials Research Society, Pittsburgh, PA, 1991), Vol. 220, p. 581.
6. H. J. Osten, Mater. Sci. Eng. B 36, 268 (1996).
7. J. Mi, P. Warren, P. Letourneau, M. Judelewicz, M. Gailhanou, M. Dutoit, C. Dubois, and J. C. Dupuy, Appl. Phys. Lett. 67, 259 (1995).
8. P. Boucaud. C. Francis, A. Larre, F. H. Julien, J. M. Lourtioz, D. Bouchier, S. Bodnar, and J. L. Regolini, Appl. Phys. Lett. 66, 70 (1995).
9. J. W. Strane, H. J. Stein, S. R. Lee, B. L. Doyle, S. T. Picraux, and J. W. Mayer, Appl. Phys. Lett. 63, 2786 (1993).
10. C. A. Londos, Phys. Rev. B 35, 6295 (1987).
11. C. A. King, J. L. Hoyt, and J. F. Gibbons, IEEE Trans. Electron Devices 36, 2093 (1989).
12. J. L. Hoyt, C. A. King, D. B. Noble, C. M. Gronet, J. F. Gibbons, M. P. Scott, S. S. Laderman, S. J. Rosner, K. Nauka, J. Turner, and T. I. Kamins, Thin Solid Films 184, 93 (1990).
13. J. L. Hoyt, T. O. Mitchell, K. Rim, D. Singh, and J. F. Gibbons, in Proceedings of the Fourteenth International Conference on Chemical Vapor Deposition CVD-XIV-EUROCVD 11, edited by T. M. Besmann, M. D. Allendorf, McD. Robinson, and R. K. Ulrich (The Electrochemical Society, Pennington, NJ).
14. M. A. G. Halliwell and M. H. Lyons, J. Cryst. Growth 68, 523 (1984).
15. Landoldt-Börnstein, Numerical Data and Functional Relationships in Science and Technology (Spring-Verlag, Berlin, 1987), Vol. 22, pp. 9-49.
16. C. R. Wie, J. Appl. Phys. 66, 985 (1989).
17. R. C. Newman and J. B. Willis, J. Phys. Chem. Solids 26, 373 (1965).
18. J. Mi, P. Warren, M. Gailhanou, J. D. Ganiere, M. Dutoit, P. H. Jouneau, and R. Houriet, J. Vac. Sci. Technol. B 14, 1660 (1996).