Bonding, defects, and defect dynamics in the SiC-SiO2 system

Materials Research Society Symposium-Proceedings

Volumn 640, Issue , 2001, Pages H.3.3.1-H.3.3.9

  Pantelides, S T ^b,d   Buczko, R ^b,c   Di Ventra, M ^b,c   Wang, S ^b,c   Kim, S G ^b   Pennycook, S J ^b,d   Duscher, G ^b,c,d   Feldman, L C ^b,d   McDonald, K ^b   Chanana, R K ^b   Weller, R A ^b,c   Williams, J R ⁱ   Chung, G Y ⁱ   Tin, C C ⁱ   Isaacs Smith, T ⁱ  

^a Institute of Physical Chemistry   (Poland)

^b VANDERBILT UNIVERSITY   (United States)

^c Oak Ridge National Laboratory ^*

^d OAK RIDGE NATIONAL LABORATORY   (United States)

^e VANDERBILT UNIVERSITY   (United States)

^f FLORIDA STATE UNIVERSITY   (United States)

^g North Carolina State University   (United States)

^h VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

ⁱ AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85009836776     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (20)

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5. 2 interfaces
6. 2 interface states
7. 2 interfaces and a possible origin of their contrasting properties
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9. Electronic excitation energies and the soft-X-ray absorption spectra of the alkali halides
10. Pseudo-atomic-orbital band theory applied to electron-energy-loss near-edge structures
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13. Excitonic effects in core excitation spectra of semiconductors
14. Core-hole effects on energy-loss near-edge structure
15. Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon
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17. Oxygen, stability, diffusion and precipitation in SiC: Implications for thin-film oxidation
18. 2