Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC

IEEE Aerospace Conference Proceedings

Volumn 5, Issue , 2000, Pages 409-413

  Chung, G Y ^a   Tin, C C ^a   Won, J H ^a   Williams, J R ^a   McDonald, K ^b   Weller, R A ^c   Pantelides, S T ^b,d   Feldman, L C ^b,d  

^a AUBURN UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; ARGON; ELECTRONIC DENSITY OF STATES; ENERGY GAP; INTERFACES (MATERIALS); NITROGEN; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON WAFERS; THERMAL EFFECTS;

CONDUCTION BAND EDGE; INTERFACE STATE DENSITY; INTERFACE TRAP DENSITY; POST-GROWTH RE-OXIDATION ANNEALING; POST-METALLIZATION ANNEALING;

SILICON CARBIDE;

EID: 0034432581     PISSN: 1095323X     EISSN: None     Source Type: Journal    
DOI: 10.1109/AERO.2000.878515     Document Type: Article

References (10)