6H- and 4H-SiC(0001) Si surface richness dosing by hydrogen etching: A way to reduce the formation temperature of reconstructions

Surface Review and Letters

Volumn 10, Issue 1, 2003, Pages 55-63

  Diani, M ^a   Diouri, J ^a   Kubler, L ^b   Simon, L ^b   Aubel, D ^b   Bolmont, D ^b  

^a FACULTÉ DES SCIENCES   (Morocco)

^b UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

Etching by hydrogen; LEED; Photoemission; SiC polytypes; Surface reconstructions

Indexed keywords

ANNEALING; CRYSTALLOGRAPHY; ETCHING; HYDROGEN; SILICON;

BINARY SYSTEMS;

SURFACE CHEMISTRY;

HYDROGEN; SILICON;

ARTICLE; CRYSTALLOGRAPHY; HEATING; HIGH TEMPERATURE; LOW TEMPERATURE; ROOM TEMPERATURE; SURFACE PROPERTY; TECHNIQUE; TECHNOLOGY;

EID: 0037318603     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X03004652     Document Type: Article

References (35)

1. R. Kaplan, Surf. Sci. 215, 111 (1989).
2. F. Owman and P. Martensson, Surf. Sci. 330, L639 (1995).
3. M. A. Kulakov, G. Henn and B. Bullemer, Surf. Sci. 346, 49 (1996).
4. L. Li and I. S. T. Tsong, Surf. Sci. 351, 141 (1996).
5. L. I. Johansson, F. Owman and P. Martensson, Phys. Rev. B53, 13793 (1996).
6. L. I. Johansson, F. Owman, P. Martensson, C. Persson and U. Lindefelt, Phys. Rev. B53, 13803 (1996).
7. V. van Elsbergen, T. U. Kampen and W. Mönch, Surf. Sci. 365, 443 (1996).
8. J. M. Themlin, I. Forbeaux, V. Langlais, H. Belkhir and J. M. Debever, Europhysics Lett. 39, 61 (1997).
9. T. Jikimoto, T. Tsukamoto, A. Kinoshita, Y. Satoh, M. Hirai, M. Kusaka, M. Iwami and T. Nakata, Appl. Surf. Sci. 117/118, 794 (1997).
10. V. Van Elsbergen, H. Nienhaus and W. Mönch, Appl. Surf. Sci. 123/124, 38 (1998) .
11. U. Starke, J. Schardt, J. Bernhardt, M. Franke, K. Reuter, H. Wedler, K. Heinz, J. Fürthmüller, P. Käckel and F. Bechstedt, Phys. Rev. Lett. 80, 758 (1998).
12. L. Simon, J. L. Bischoff and L. Kubler, Phys. Rev. B60, 11653 (1999).
13. F. Amy, P. Soukiassian, Y. K. Hwu and C. Brylinski, Surf. Sci. 464, L691 (2000).
14. J. Schardt, J. Bernhardt, U. Starke and K. Heinz, Phys. Rev. B62, 10335 (2000) .
15. F. S. Tautz, S. Sloboshanin, U. Starke and J. A. Schaefer, Surf. Sci. 470, L25 (2000).
16. J. W. Liu, F. Q. Xie, Q. Z. Zang, K. H. Wu, X. C. Ma, E. G. Wang and W. X. Liu, Thin Solid Films 375, 77 (2000).
17. L. S. O. Johansson, L. Duda, M. Laurenzis, M. Krieftewirth and B. Reihl, Surf. Sci. 45, 109 (2000).
18. X. N. Xie, H. Q. Wang, A. T. S. Wee and K. P. Loh, Surf. Sci. 478, 57 (2001).
19. Y. Han, T. Aoyama, A. Ichimiya, Y. Hisada and S. Mukainakano, Surf. Sci. 493, 238 (2001).
20. A. Fissel, U. Kaiser, K. Pfennighaus, B. Schröter and W. Richter, Appl. Phys. Lett. 68, 1204 (1996).
21. U. Starke, J. Schardt, J. Bernhardt, M. Franke and K. Heinz, Phys. Rev. Lett. 82, 2107 (1999).
22. U. Starke, J. Bernhardt, J. Schardt and K. Heinz, Surf. Rev. Lett. 6, 1129 (1999).
23. K. Heinz, U. Starke, J. Bernhardt and J. Schardt, Appl. Surf. Sci. 162, 9 (2000).
24. A. Fissel, U. Kaiser, B. Schröter, J. Kräusslich and W. Richter, Thin Solid Films 380, 89 (2000).
25. M. Diani, L. Simon, L. Kubler, D. Aubel, I. Matko, B. Chenevier, R. Madar and M. Audier, J. Crystal Growth 235, 95 (2002).
26. P. Badziag, Surf. Sci. 352, 396 (1996).
27. V. van Elsbergen, O. Janzen and W. Mönch, Mater. Sci. Eng. B46, 366 (1997).
28. C. R. Stoldt, C. Carraro and R. Maboudian, Surf. Sci. 466, 66 (2000).
29. T. Fujino, T. Fuse, J. T. Ryu, K. Inudzuka, Y. Yamazaki, M. Katayama and K. Oura, Appl. Surf. Sci. 169, 113 (2001).
30. N. Sieber, B. F. Mantel, Th. Seyller, J. Ristein, L. Ley, T. Heller, D. R. Batchelor and D. Schmeisser, Appl. Phys. Lett. 78, 1216 (2001).
31. J. Takami, M. Naitoh, I. Yokoh, S. Nishigaki and N. Toyoma, Surf. Sci. 482, 359 (2001).
32. X. N. Xie, R. Lim, J. Li, S. F. Y. Li and K. P. Loh, Diamond and Related Materials 10, 1218 (2001).
33. J. Bernhardt, J. Schardt, U. Starke and K. Heinz, Appl. Phys. Lett. 74, 1084 (1999).
34. P.-A. Glanz and L. I. Johansson, Surf. Sci. 465, L759 (2000).
35. C. Virojanadara and L. I. Johansson, Surf. Sci. 505, 358 (2002).