메뉴 건너뛰기




Volumn 68, Issue 9, 1996, Pages 1204-1206

Growth of 6H-SiC on 6H-SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0037523820     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115969     Document Type: Article
Times cited : (31)

References (18)
  • 5
    • 21544440067 scopus 로고    scopus 로고
    • A. Fissel, U. Kaiser, K. Pfennighaus, E. Ducke, B. Schröter, and W. Richter, Inst. Phys. Conf. Ser. (to be published).
    • A. Fissel, U. Kaiser, K. Pfennighaus, E. Ducke, B. Schröter, and W. Richter, Inst. Phys. Conf. Ser. (to be published).
  • 14
    • 21544479952 scopus 로고    scopus 로고
    • E. Ducke, R. Kriegel, A. Fissel, U. Kaiser, B. Schröter, P. Müller, and W. Richter, Inst. Phys. Conf. Ser. (to be published).
    • E. Ducke, R. Kriegel, A. Fissel, U. Kaiser, B. Schröter, P. Müller, and W. Richter, Inst. Phys. Conf. Ser. (to be published).
  • 15
    • 21544436235 scopus 로고    scopus 로고
    • U. Kaiser, W. M. Stobbs, S. B. Newcomb, A. Fissel, and W. Richter (unpublished).
    • U. Kaiser, W. M. Stobbs, S. B. Newcomb, A. Fissel, and W. Richter (unpublished).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.