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Volumn 352-354, Issue , 1996, Pages 396-400
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Can hydrogen stabilize the α-SiC(001)√3 × √3 surface?
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Author keywords
Low index single crystal surfaces; Semi empirical models and model calculations; Silicon carbide; Surface relaxation and reconstruction
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Indexed keywords
CALCULATIONS;
CARBON;
CHEMICAL BONDS;
HYDROGEN;
INTERFACIAL ENERGY;
MATHEMATICAL MODELS;
QUANTUM THEORY;
SILICON;
SILICON CARBIDE;
SINGLE CRYSTALS;
STOICHIOMETRY;
SURFACE STRUCTURE;
SEMI EMPIRICAL MODELS;
SURFACE RECONSTRUCTION;
SURFACE RELAXATION;
SURFACE PHENOMENA;
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EID: 0030141836
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(95)01168-4 Document Type: Article |
Times cited : (14)
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References (22)
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