메뉴 건너뛰기




Volumn 352-354, Issue , 1996, Pages 396-400

Can hydrogen stabilize the α-SiC(001)√3 × √3 surface?

Author keywords

Low index single crystal surfaces; Semi empirical models and model calculations; Silicon carbide; Surface relaxation and reconstruction

Indexed keywords

CALCULATIONS; CARBON; CHEMICAL BONDS; HYDROGEN; INTERFACIAL ENERGY; MATHEMATICAL MODELS; QUANTUM THEORY; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; STOICHIOMETRY; SURFACE STRUCTURE;

EID: 0030141836     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01168-4     Document Type: Article
Times cited : (14)

References (22)
  • 9
    • 0010617107 scopus 로고
    • Paris
    • S. Tyc, J. Phys. (Paris) 4 (1994) 617.
    • (1994) J. Phys. , vol.4 , pp. 617
    • Tyc, S.1
  • 21


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.