The evolution of 3 × 3, 6 × 6, √3 × √3R30° and 6√3 × 6√3R30° superstructures on 6H-SiC (0 0 0 1) surfaces studied by reflection high energy electron diffraction

Surface Science

Volumn 478, Issue 1-2, 2001, Pages 57-71

  Xie, X N ^a   Wang, H Q ^a   Wee, A T S ^a   Loh, Kian Ping ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Auger electron spectroscopy; Graphite; Low energy electron diffraction (LEED); Reflection high energy electron diffraction (RHEED); Semiconducting surfaces; Silicon carbide; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; GRAPHITE; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SURFACE ROUGHNESS;

SUPERSTRUCTURES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035341969     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)01064-5     Document Type: Article

References (35)