-
1
-
-
33749876236
-
-
pp. 595-596
-
BETT, A.W., ADELHELM, R., AGERT, C, BECKERT, R., DIMROTH, F., and SCHUBERT, U: 'Advanced III-V solar cell structures grown by MOVPE'. Technical digest of the 11th international photovoltaic science and engineering conference, 1999, Sapporo, Japan, pp. 595-596
-
W., ADELHELM, R., AGERT, C, BECKERT, R., DIMROTH, F., and SCHUBERT, U: 'Advanced III-V Solar Cell Structures Grown by MOVPE'. Technical Digest of the 11th International Photovoltaic Science and Engineering Conference, 1999, Sapporo, Japan
-
-
Bett, A.1
-
2
-
-
33749886404
-
-
pp. 93I-934
-
BETT, A.W., KESER, S., STOLLWERK, G., SULIMA, O.V, and WEITLING, W: 'Over 31 %-effkient GaAs/GaSb tandem concentrator solar cells'. Proceedings of 26th conference of Photovoltaic specialists, 1997, Anaheim, ÇA, pp. 93I-934
-
W., KESER, S., STOLLWERK, G., SULIMA, O.V, and WEITLING, W: 'Over 31 %-Effkient GaAs/GaSb Tandem Concentrator Solar Cells'. Proceedings of 26th Conference of Photovoltaic Specialists, 1997, Anaheim, ÇA
-
-
Bett, A.1
-
3
-
-
0000977347
-
-
pp. 2247-2252
-
CHARACHE, G.W., BALDASARO, P.P., DANIELSON, L.R., DEPOY, D.M., FREEMAN, M.J., WANG, C.A., CIIOI, U.K., GARBUZOV, D.Z., MARTINELLI, R.U, KHALFIN, V, SAROOP, S., BORREGO, J.M., and GUTMANN, R.J.: 'InGaAsSb thermophotovoltaic diode: Physics evaluation', J. Appl. Phys., 1999, 85, (4), pp. 2247-2252
-
W., BALDASARO, P.P., DANIELSON, L.R., DEPOY, D.M., FREEMAN, M.J., WANG, C.A., CIIOI, U.K., GARBUZOV, D.Z., MARTINELLI, R.U, KHALFIN, V, SAROOP, S., BORREGO, J.M., and GUTMANN, R.J.: 'InGaAsSb Thermophotovoltaic Diode: Physics Evaluation', J. Appl. Phys., 1999, 85, (4)
-
-
Charache, G.1
-
4
-
-
0032477102
-
-
pp. 98-104
-
LEU, S., HÖHNSDORF, F., STOLZ, W, BECKER, R., SALZMANN, A., and GREILING, A.: 'C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs',./ Cryst. Growth, 1998, 195, pp. 98-104
-
, HÖHNSDORF, F., STOLZ, W, BECKER, R., SALZMANN, A., and GREILING, A.: 'C- and O-incorporation in (AlGa)As Epitaxial Layers Grown by MOVPE Using TBAs',./ Cryst. Growth, 1998, 195
-
-
Leu, S.1
-
5
-
-
33749914733
-
-
pp. 207241
-
AARDVARK, A., MASON, N.J., and WALKER, P.J.: 'The growth of antimonides', Prog. Ciyst. Growth Cliarac., 1998, 35, (2-4), pp. 207241
-
, MASON, N.J., and WALKER, P.J.: 'The Growth of Antimonides', Prog. Ciyst. Growth Cliarac., 1998, 35, (2-4)
-
-
Aardvark, A.1
-
6
-
-
0024700686
-
-
pp. 565-569
-
DA SILVA, F.W.O., RAISIN, C., SILGA, M., NOUAOURA, M., and LASSABATERE, L.: 'Chemical Preparation of GaSb (001) substrates prior to MBE', Semicond. Sei. Techno!., 1989, 4, pp. 565-569
-
W.O., RAISIN, C., SILGA, M., NOUAOURA, M., and LASSABATERE, L.: 'Chemical Preparation of GaSb (001) Substrates Prior to MBE', Semicond. Sei. Techno!., 1989, 4
-
-
Da Silva, F.1
-
7
-
-
0030645405
-
-
pp. 55-60
-
WANG, C.A., SALIM, S., JENSEN, K.F., and JONES, A.C.: 'Characteristics of GaSb growth using various gallium and antimony precursors', J. Cry-si. Growth, 1997, 170, pp. 55-60
-
A., SALIM, S., JENSEN, K.F., and JONES, A.C.: 'Characteristics of GaSb Growth Using Various Gallium and Antimony Precursors', J. Cry-si. Growth, 1997, 170
-
-
Wang, C.1
-
8
-
-
0026946668
-
-
pp. 377-382
-
BEHET, M., STOLL, B., BRYSCH, W, and HEIME, K.: 'Growth of GaSb and InSb by low-pressure plasma MOVPE', J. Cryst. Growth, 1992, 124, pp. 377-382
-
, STOLL, B., BRYSCH, W, and HEIME, K.: 'Growth of GaSb and InSb by Low-pressure Plasma MOVPE', J. Cryst. Growth, 1992, 124
-
-
Behet, M.1
-
9
-
-
0026945522
-
-
pp. 383-388
-
DA-CHENG, L., XIANGLIN, L., DU, W, and LANYING, L.: 'Growth of GaSb and GaAsSb in the single phase region by MOVPE', J. Cryst. Growth, 1992, 124, pp. 383-388
-
, XIANGLIN, L., DU, W, and LANYING, L.: 'Growth of GaSb and GaAsSb in the Single Phase Region by MOVPE', J. Cryst. Growth, 1992, 124
-
-
Da-Cheng, L.1
-
10
-
-
0029635495
-
-
pp. 1384-1386
-
WANG, C.A., FINN, M.C., SALIM, S., JENSEN, K.F., and JONES, A.C.: 'Tritertiarybutylaluminum as an organometallic source for epitaxial growth of AlGaSb', Appl. Phys. Lett., 1995, 67, (10), pp. 1384-1386
-
A., FINN, M.C., SALIM, S., JENSEN, K.F., and JONES, A.C.: 'Tritertiarybutylaluminum as an Organometallic Source for Epitaxial Growth of AlGaSb', Appl. Phys. Lett., 1995, 67, (10)
-
-
Wang, C.1
-
11
-
-
0026226065
-
-
pp. 441-448
-
CAO, D.S., FANG, Z.M., and STRINGFELLOW, G.B.: 'Organometallic vapor-phase epitaxial growth of AIGaSb and AIGaAsSb', J. Cryst. Growth, 1991, 113, pp. 441-448
-
S., FANG, Z.M., and STRINGFELLOW, G.B.: 'Organometallic Vapor-phase Epitaxial Growth of AIGaSb and AIGaAsSb', J. Cryst. Growth, 1991, 113
-
-
Cao, D.1
-
12
-
-
0030654625
-
-
pp. 103-108
-
HOLLFELDER, M., HON, S., SETZER, B., SCHIMPF, K., HORSTMANN, M., SCHÄFERS, T., SCHMITZ, D., HARDTDEGEN, H., and LÜTH, H.: 'Demonstration of the N2 carrier process for LP-MOVPE of III/Vs',./ Ciyst. Growth, 1997, 170, pp. 103-108
-
, HON, S., SETZER, B., SCHIMPF, K., HORSTMANN, M., SCHÄFERS, T., SCHMITZ, D., HARDTDEGEN, H., and LÜTH, H.: 'Demonstration of the N2 Carrier Process for LP-MOVPE of III/Vs',./ Ciyst. Growth, 1997, 170
-
-
Hollfelder, M.1
|