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Semiconductor Science and Technology

Volumn 17, Issue 1, 2002, Pages 39-46

Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE

(3) Agert, Carsten a Gladkov, Peter S b Bett, Andreas W a

a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE (Germany)

b INSTITUTE OF PHOTONICS AND ELECTRONICS (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL IMPURITIES; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; NEGATIVE IONS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ANIONIC SUBLATTICES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036141239 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/1/307 Document Type: Article

Times cited : (26)

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