Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates

Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1755-1757

  Nordell, N ^a   Bowallius, O ^a   Anand, S ^a   Kakanakova Georgieva, A ^b   Yakimova, R ^b   Madsen, L D ^b   Karlsson, S ^c   Konstantinov, A O ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING INSTITUTE OF TECHNOLOGY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATE; CROSS SECTION; DOPING DISTRIBUTION; HOMOEPITAXIAL; LATTICE DIRECTIONS; LOW GROWTH TEMPERATURE; N-TYPE DOPING; NON-PLANAR SUBSTRATES; NORMAL GROWTH; P-TYPE DOPING; POLYTYPES; SCANNING CAPACITANCE SPECTROSCOPY; SUBSTRATE GEOMETRY;

SILICON CARBIDE;

SUBSTRATES;

EID: 79955995101     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1458048     Document Type: Article

References (9)

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