Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy

Journal of Applied Physics

Volumn 90, Issue 1, 2001, Pages 443-448

  Buh, G H ^a   Chung, H J ^a   Yi, J H ^a,b   Yoon, I T ^a   Kuk, Y ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035396374     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1375803     Document Type: Article

References (17)

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