Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy

Applied Physics Letters

Volumn 78, Issue 17, 2001, Pages 2560-2562

  Fujii, Hideo ^a,c   Matsukawa, Takashi ^a,c   Kanemaru, Seigo ^a,c   Yokoyama, Hiroshi ^a,c   Itoh, Junji ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035938295     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1365416     Document Type: Article

References (6)

1. H. Fujii, S. Kanemaru, T. Matsukawa, and J. Itoh, Appl. Phys. Lett. 75, 3986 (1999).
2. J. Itoh, Y. Nazuka, S. Kanemaru, T. Inoue, H. Yokoyama, and K. Shimizu, J. Vac. Sci. Technol. B 14, 2105 (1996).
3. H. Yokoyama and T. Inoue, Thin Solid Films 242, 33 (1994).
4. J. A. Dagata, T. Inoue, J. Itoh, and H. Yokoyama, Appl. Phys. Lett. 73, 271 (1998).
5. M. Bruel, Electron. Lett. 13, 1201 (1995).
6. H. Fujii, S. Kanemaru, T. Matsukawa, and J. Itoh (unpublished).