In-situ time-resolved infrared spectroscopic study of silicon-oxide surface during selective etching over silicon in fluorocarbon plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 6990-6995

  Ishikawa, Kenji ^a   Sekine, Makoto ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Infrared spectroscopy; Plasma etching

Indexed keywords

ATTENUATION; INFRARED SPECTROSCOPY; LIGHT REFLECTION; SILICA;

FLUOROCARBON PLASMAS; SELECTIVE ETCHING; TIME-RESOLVED INFRARED SPECTROSCOPY;

PLASMA ETCHING;

EID: 0034429285     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6990     Document Type: Article

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